| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents a reduction in a breakdown strength at a high reliability. SOLUTION: The semiconductor device contains a semiconductor layer, a first well of a first conductive type formed in a high breakdown strength transistor forming region 100, a high breakdown strength transistor 100P having a second conductive type channel formed in the first well, a second well of a second conductive type adjacent to the first well, a third well of the first conductive type formed in a low breakdown strength transistor forming region 200 and adjacent to the second well, low breakdown strength transistors 200N, 200P formed in the third well, an interlayer insulating layer formed on the semiconductor layer, and a conductive layer 50 formed on the interlayer insulating layer. The conductive layer 50 is not formed in at least one of a first boundary 30 between the first well and the second well, and a second boundary 32 between the second well and the third well in plan view. COPYRIGHT: (C)2007,JPO&INPIT
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