发明名称 |
Nitride semiconductor light emitting device |
摘要 |
A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
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申请公布号 |
US2007090339(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060584504 |
申请日期 |
2006.10.23 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE DONG Y.;KANG SANG W.;SONG KEUN M.;KIM JE W.;HONG SANG S. |
分类号 |
H01L31/00;H01L33/06;H01L33/32 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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