发明名称 Verfahren zum Herstellen von elektronischen Elementen
摘要 <p>The manufacturing method uses a semiconductor wafer with active regions (2) for the electronic elements (1) formed in its front surface, together with spaced separation regions, for dividing the electronic components from one another. A conductive contact layer (7) applied to the front surface is structured to provide contact terminals (9) across at least part of the cross-section of the separation regions, before etching the rear surface of the semiconductor wafer at the separation regions, for separating the contact terminals associated with the different electronic elements.</p>
申请公布号 DE59813943(D1) 申请公布日期 2007.04.26
申请号 DE1998513943 申请日期 1998.02.14
申请人 MICRONAS GMBH 发明人 IGEL, GUENTER DIPL.-ING.;MALL, MARTIN DR. DIPL.-PH
分类号 H01L21/60;H01L21/301;H01L21/304;H01L23/485 主分类号 H01L21/60
代理机构 代理人
主权项
地址