GARIUM-NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, IMAGE DISPLAY DEVICE, PLANAR LIGHT SOURCE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE ASSEMBLY

摘要

PROBLEM TO BE SOLVED: To provide a GaN-base semiconductor light emitting element which includes a structure for suppressing the large shift of a light emission wavelength with the increase of an operation current density, and controls luminance in a larger range.

SOLUTION: The GaN-base semiconductor light emitting element comprises (A) an n-conductivity type first GaN-base compound semiconductor layer 13, (B) an active layer 15 having a multiple quantum well structure comprising a well layer and a barrier layer for separating well layers from each other, and (C) a p-conductivity type second GaN-base compound semiconductor layer 17. The well layer in the active layer 15 is disposed so as to satisfy d12wherein d1represents the well layer density on the first GaN-base compound semiconductor layer side in the active layer 15, and d2represents the well layer density on the second GaN-base compound semiconductor layer side.

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