| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor and a diode exhibiting a high breakdown voltage with a small area. SOLUTION: Filling regions 25<SB>1</SB>-25<SB>5</SB>arranged in a guard groove are connected with auxiliary diffusion regions 34<SB>1</SB>-34<SB>5</SB>and 35<SB>1</SB>-35<SB>4</SB>formed by diffusion to constitute guard ring regions 36<SB>1</SB>-36<SB>5</SB>such that the shortest distance between the guard ring regions 36<SB>1</SB>-36<SB>5</SB>is the distance between opposing auxiliary diffusion regions 34<SB>1</SB>-34<SB>5</SB>and 35<SB>1</SB>-35<SB>4</SB>. Shortest distance between the guard ring regions 36<SB>1</SB>-36<SB>5</SB>is made longer on the outside than on the inside. When the reverse bias voltage is low, a depletion layer reaches the one outside guard ring region 36<SB>2</SB>easily from the inside guard ring region 36<SB>1</SB>. When the reverse bias voltage is high, the voltage shared between the outside guard ring regions becomes higher than the voltage shared between the inside guard ring regions per guard ring regions and thereby a high breakdown voltage is attained with a small area. COPYRIGHT: (C)2007,JPO&INPIT |
