| 摘要 |
This invention is to provide a semiconductor laser device with a small interval between light emitting points of laser lights and a method of manufacturing the same. A first light emitting element 1 a having a semiconductor substrate 12 a and a laser oscillation section 10 a, and a second light emitting element 2 a having a laser oscillation section 4 a, are brought together with a ridged waveguide 8 of the laser oscillation section 10 a facing the ridged waveguide 5 of the laser oscillation section 4 a, and then bonded together by virtue of SOGs 3 a having a small thickness. A conductive wiring layer Qa 1 electrically connected with an ohmic electrode layer 9 a on the ridged waveguide 8 a, and a wiring layer Qa 2 electrically connected with an ohmic electrode layer 6 a on the ridged waveguide 5 a, are arranged to extend until the insulating layer 11 a on the semiconductor substrate 12 a. Further, the ohmic electrodes Pa 1 and Pa 2 are formed on the bottom surface of the semiconductor substrate 12 a and the top surface of the laser oscillation section 4 a, respectively. In this way, when a drive current is supplied between the ohmic electrode Pa 1 and the wiring layer Qa 1 , the laser oscillation section 10 a will emit a light. On the other hand, when a drive current is supplied between the ohmic electrode Pa 2 and the wiring layer Qa 2 , the laser oscillation section 4 a will emit a light. In this manner, since the laser oscillation sections 4 a and 10 a are bonded together by virtue of SOGs 3 a having a small thickness, it is allowed to form a semiconductor laser device with a small interval between light emitting points.
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