Method of operating ion source and ion implanting apparatus

摘要

When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage V_B of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.