发明名称 |
PIXEL WITH TRANSFER GATE WITH NO ISOLATION EDGE |
摘要 |
A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region. |
申请公布号 |
WO2007008552(A3) |
申请公布日期 |
2007.04.26 |
申请号 |
WO2006US26278 |
申请日期 |
2006.07.07 |
申请人 |
MICRON TECHNOLOGY, INC.;MCKEE, JEFFREY, A. |
发明人 |
MCKEE, JEFFREY, A. |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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