APPARATUS AND PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL

摘要

This invention provides an apparatus for manufacturing a semiconductor single crystal by a CZ process, which can regulate the resistivity and oxygen concentration of a silicon single crystal and can improve the yield of the single crystal, and a process for producing a semiconductor single crystal. A wall (10) is provided for comparting a chamber inner wall (1c) in a chamber (1) from a crucible (2) and a heater (6). The wall (10) comprises three members, i.e., a single crystal-side rectifying member (11), a melt surface-side rectifying member (12), and a heater-side rectifying member (13), which are connected to each other to form a purge gas guide path (100). When a semiconductor single crystal is pulled up, the flow rate of a purge gas passed through near the surface of the melt in a quartz crucible (3) is regulated to 0.2 to 0.35 m/min by purge gas introduction means.