| 摘要 |
PROBLEM TO BE SOLVED: To obtain the optimization of two technologies (CMOS and CCD) where pinned photodiodes are integrated into an image sensing element of an active pixel sensor. SOLUTION: This pinned photodiode is manufactured with process steps in the active pixel architecture. Charge accumulated within the active pixel pinned photodiode is transferred into a charge sensing node through a transfer gate. The floating diffusion is coupled to a CMOS circuit which provides addressing capabilities of respective pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode. COPYRIGHT: (C)2007,JPO&INPIT
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