发明名称 SEMICONDUCTOR PROCESSING APPARATUS AND HEAT TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To eliminate unevenness in temperature due to a resistance heating element in a reactor to enhance processed quality of a substrate. SOLUTION: This semiconductor processing apparatus is provided with a reaction tube 2 which processes the substrate 6 placed on a substrate holder 7 inside, a cylindrical heat insulator 3 provided so as to surround the reaction tube, and the resistance heating element 4 provided on a inner surface of the cylindrical heat insulator, wherein the resistance heating element is divided into a desired number of partial heating elements 4a, 4b, 4c along an axial of the reaction tube, power supply lines 5a, 5b, 5c are connected to the respective partial heating elements through the cylindrical heat insulator, respectively, and extension portions which extend to the outside of the cylindrical heat insulator are covered with heat insulators 11a, 11b, 11c for power supply line, respectively. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007110163(A) 申请公布日期 2007.04.26
申请号 JP20070002790 申请日期 2007.01.10
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ONO KENJI
分类号 H01L21/31;H01L21/22 主分类号 H01L21/31
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