| 摘要 |
Solvent removal of photoresist mask and gold containing post-etch residues in the production of semiconductor wafer plasma etching is effectively conducted prior to further processing of the wafer. Using metallic iodine dissolved in a polar solvent system, the chemistry penetrates and quickly dissolves the photoresist mask while iodine complexes and leaches away gold present in the etch residue to allow complete removal of all surface and residue polymer in one simple process. The system is in lieu of conventional procedures that require several process steps involving, first, the removal of the resist mask by an oxygen-rich plasma, otherwise referred to as "ashing," followed by alternating inorganic and organic chemistries which react with gold and the post-etch polymer residue, and where the post-etch gold coated residue is heavy, requires repeated processing until the desired result is attained. The invention provides a simplified one-step process effected by immersion or a semiconductor wafer spray tool. Heat and agitation accelerate removal and help to achieve desired selectivity in removing the residue. Co-solvents and surfactants enhance penetration of small geometries and aid in rinsing.
|
