A method for performing a bit line implant is disclosed. The method includes forming a group of structures on an oxide-nitride-oxide stack of a semiconductor device. Each structure of the group of structures includes a polysilicon portion and a hard mask portion. A first structure of the group of structures is separated from a second structure of the group of structures by less than 100 nanometers. The method further includes using the first structure and the second structure to isolate a portion of the semiconductor device for the bit line implant.
申请公布号
US2007093042(A1)
申请公布日期
2007.04.26
申请号
US20050254769
申请日期
2005.10.21
申请人
HUI ANGELA T;YANG JEAN;SUN YU;RAMSBEY MARK T;QIAN WEIDONG
发明人
HUI ANGELA T.;YANG JEAN;SUN YU;RAMSBEY MARK T.;QIAN WEIDONG