| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a program method of a flash memory device by which reliability of the device is enhanced by reducing distribution width of a threshold voltage of a state "10" having the widest threshold voltage distribution width during program operation of the flash memory device having a multi-level cell. <P>SOLUTION: In a program operation (LSB program) having the state "10", a dummy pulse having no verification operation is applied to the multi-level cell before application of a program voltage to reduce distribution width of the threshold voltage having the state "10". <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
