| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology in which film deposition can be carried out shortly after a substrate is supplied while maintaining the temperature of a structure in a film deposition chamber. SOLUTION: The plasma enhanced CVD apparatus is equipped with a plurality of processing chambers 5 provided with a plurality of film deposition chambers, a loading chamber and, an unloading chamber, a substrate transport apparatus 7 which takes in and out the substrate 6 to each of the plurality of processing chamber 5, a position detection device 8 which detects the position of the substrate, a latency time detector 9 which judges whether the latency time until the substrate 6 is taken in at each film deposition chamber 2 is long or not based on the position information of the substrate 6 detected by the position detection device 8, and a plurality of film deposition chamber control devices 10 which controls each operation of the plurality of the film deposition chambers 2. Each of the plurality of the film deposition chamber control devices 10 controls the operation of the film deposition chamber 2, so that the temperature maintenance operation for maintaining the temperature in the film deposition chamber 2 so as to be near to the temperature of film deposition is carried out, when the latency time detector 9 judges that the latency time is long. COPYRIGHT: (C)2007,JPO&INPIT
|
