| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a contact hole which can increase the control function of a serious dimension. SOLUTION: First, a substrate 100 is provided. A mask layer 102 is formed on the substrate 100, and a trench 105 is formed in the mask layer 102. The depth of the trench 105 is below the thickness of the mask layer 102, and the trench 105 is extended in the direction of y. Then, a trench 112 is formed in the mask layer 102. The depth of the trench 112 is below the thickness of the mask layer 102, and the trench 112 is extended in the direction of x. The aperture 116 of the mask layer 102 exists in the position where the trench 105 and the trench 112 cross. The aperture 116 exposes the substrate 100. Then, the part of the substrate 100 exposed by the aperture 116 is removed in order to form the contact hole in the substrate 100. COPYRIGHT: (C)2007,JPO&INPIT
|
