发明名称 |
Semiconductor substrate of GaAs and semiconductor device |
摘要 |
A semiconductor substrate ( 1 ) of GaAs with a semiconductor layer sequence ( 2 ) applied on top. The semiconductor layer sequence ( 2 ) contains a plurality of semiconductor layers ( 3, 4, 5, 6, 7 ) of Al<SUB>1-y</SUB>Ga<SUB>y</SUB>As<SUB>1-x</SUB>Px with 0<=x<=1 and 0<=y<=1, the phosphorus component x in a number of the semiconductor layers respectively being greater than in a neighboring semiconductor layer lying thereunder in the direction of growth. Such a semiconductor substrate may be advantageously used as a quasi-substrate substrate ( 8 ) for growing further semiconductor layers ( 28 ) which have a smaller lattice constant than GaAs.
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申请公布号 |
US2007090396(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060541089 |
申请日期 |
2006.09.28 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
LINDER NORBERT;GRONNINGER GUNTHER;HEIDBORN PETER;STREUBEL KLAUS;KUGLER SIEGMAR |
分类号 |
H01L31/00;H01L33/02;H01L33/04;H01L33/30 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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