Charge compensated dielectric layer structure and method of making the same

摘要

A method of forming a semiconductor structure comprises providing an insulator layer overlying a III-V compound substrate, the insulator layer having a surface charge layer, the surface charge layer having a deleterious performance effect on the underlying layer or layers of the III-V compound substrate. The method further comprises transforming the surface charge layer into a passivated surface layer, wherein the passivated surface layer reduces the deleterious performance effect on the underlying layer or layers.