发明名称 High power top emitting vertical cavity surface emitting laser
摘要 A laser device including a VCSEL array provides an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 mum and a pitch of less than 80 mum, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area.
申请公布号 US2007091960(A1) 申请公布日期 2007.04.26
申请号 US20040569059 申请日期 2004.08.30
申请人 GAUGGEL HANS-PETER;ROYO PAUL 发明人 GAUGGEL HANS-PETER;ROYO PAUL
分类号 H01S5/00;H01S5/42 主分类号 H01S5/00
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