发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 A thin film transistor array panel comprises a plurality of gate lines formed on an insulating substrate; a repair line formed on the insulating substrate; a gate insulating layer formed on the gate lines and the repair line; a plurality of data lines formed on the gate insulating layer; an electricity dissipation line formed on the gate insulating layer crossing the gate lines and the repair line; and a first diode connecting the repair line and the electricity dissipation line. When static electricity is introduced through the repair lines, the static electricity is transferred to the electricity dissipation line and is dispersed or exhausted before it reaches to the data lines. As a result, the TFTs and wires in the display area are prevented from being destroyed by the static electricity.
申请公布号 US2007091219(A1) 申请公布日期 2007.04.26
申请号 US20060562205 申请日期 2006.11.21
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 CHANG JONG-WOONG
分类号 G02F1/1333;G02F1/1345;G02F1/1362;H01L27/12 主分类号 G02F1/1333
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