发明名称 |
HAFNIUM TITANIUM OXIDE FILMS |
摘要 |
Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices.
|
申请公布号 |
US2007090439(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060565826 |
申请日期 |
2006.12.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/94;H01L27/108;H01L29/76;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|