| 摘要 |
A semiconductor component and production method is disclosed. In one embodiment, the semiconductor component includes at least one vertical semiconductor power device having an upper side which includes at least one output electrode and a lower side which includes at least one input electrode and at least one control electrode. A contact clip with at least one peripheral rim portion is disposed on and electrically connected to the output electrode. The peripheral rim portion extends over and spaced from an edge of said semiconductor power device and terminating in a clip rim surface with is substantially coplanar with the source electrode and gate electrode. A thermally conductive, electrically insulating isolation layer is disposed on the upper surface of the contact clip and an electrically conductive layer is disposed on at least regions of isolation layer. The electrically conductive layer lies at a free potential and provides a connection surface for heat dissipating means.
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