发明名称 |
TRANSITION METAL-DOPED OXIDE SEMICONDUCTOR EXHIBITING ROOM-TEMPERATURE FERROMAGNETISM AND METHOD OF SENSING A GAS BY DETECTING CHANGE IN MAGNETIC PROPERTIES |
摘要 |
An oxide semiconductor doped with a transition metal and exhibiting room-temperature ferromagnetism is disclosed. The transition metal-doped oxide semiconductor is preferably manufactured in powder form, and the transition metal is preferably evenly distributed throughout the oxide semiconductor. The preferred embodiments are iron-doped tin dioxide and cobalt-doped tin dioxide. Gases may be detected by passing them across a material and measuring the change in magnetic properties of the material; the preferred material is iron-doped tin dioxide. |
申请公布号 |
WO2006015321(A9) |
申请公布日期 |
2007.04.26 |
申请号 |
WO2005US27269 |
申请日期 |
2005.08.01 |
申请人 |
BOISE STATE UNIVERSITY;PUNNOOSE, ALEX |
发明人 |
PUNNOOSE, ALEX |
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