BIT LINE IMPLANT

摘要

A method for performing a bit line implant is disclosed. The method includes forming a group of structures (1410) on an oxide-nitride-oxide stack (1220, 1230, 1240) of a semiconductor device (1200). Each structure of the group of structures includes a polysilicon portion (1250) and a hard mask portion (1260). A first structure (1410) of the group of structures is separated from a second structure (1410) of the group of structures by less than 100 nanometers. The method further includes using the first structure (1410) and the second structure (1410) to isolate a portion of the semiconductor device (1200) for the bit line implant.