CONTACT HOLE FORMATION METHOD FOR ACTIVE MATRIX SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a contact hole formation method of an active matrix substrate in which a low contact resistance can be obtained. SOLUTION: The contact hole formation method includes (1) a process for forming an insulating film by covering a first electrode provided on a substrate and the substrate, (2) a process for forming a contact hole by patterning the insulating film by dry etching, and (3) a process for forming a second electrode and obtaining contact between the second electrode and the first electrode. After the contact hole is formed by dry etching in the process (2), the contact hole has its surface treated by plasma etching using oxygen gas. COPYRIGHT: (C)2007,JPO&INPIT