| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with element isolation film which is less in a variation of height dimension from substrate surface and profiled in a desired height dimension from the substrate surface. SOLUTION: A manufacturing process of semiconductor device 1 comprises the steps of arranging film having a silicon nitride film 13, and protection film 14 covering the silicon nitride film 13 in a designated pattern on a semiconductor substrate 11; forming a groove 111 by selectively etching the semiconductor substrate 11 using the protection film 14 as a mask; exposing the silicon nitride film 13 by removing the protection film 14 among films; depositing an element isolation film 16, so that it may embed the groove 111 and cover the silicon nitride film 13; removing the element isolation film 16 formed on the silicon nitride film 13 by polishing until the silicon nitride film 13 is exposed; and removing the silicon nitride film 13. COPYRIGHT: (C)2007,JPO&INPIT
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