| 摘要 |
PROBLEM TO BE SOLVED: To provide a new method for forming atomically complete atomic-scale metal wires and atomic-scale metal clusters on a silicon substrate. SOLUTION: Atomic-scale metal wires comprising metal wires with the width of one atom or few atoms, which will be utilized for atomic-scale wire or nanocluster arrays used in electronic devices or solid-state quantum information devices, can be produced via the following steps: (1) preparing a surface having self-organizing nanolines as a template; (2) masking the surface except the self-organizing nanolines with a masking material; and (3) depositing a metal that has a wetting characteristic selectivity for the self-organizing nanolines onto the nanoline at a suitable temperature to grow metal wires composed of the metal. The metal having wetting property is preferably indium, aluminum or gallium. COPYRIGHT: (C)2007,JPO&INPIT
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