发明名称 SEMICONDUCTOR DEVICE WITH VERTICAL ELECTRON INJECTION AND ITS MANUFACTURING METHOD
摘要 A method for making a semiconductor device with vertical electron injection, including: transferring a monocrystalline thin film onto a first face of a support substrate; producing at least one electronic component from the monocrystalline thin film; forming at least one recess in a second face of the substrate to enable electric or electronic access to the electronic component through the monocrystalline thin film; and producing a vertical electron injector configured to inject electrons into the electronic component.
申请公布号 US2007093009(A1) 申请公布日期 2007.04.26
申请号 US20060561685 申请日期 2006.11.20
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 BAPTIST ROBERT;LETERTRE FABRICE
分类号 H01L21/338;H01J31/00;H01L21/20;H01L21/36;H01L33/00;H01L33/20;H01S5/02;H01S5/04;H01S5/042;H01S5/10;H01S5/183;H01S5/30;H01S5/323 主分类号 H01L21/338
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