发明名称 |
FABRICATION OF TRANSISTORS |
摘要 |
<p>A method for fabricating transistors such as high electron mobility transistors, each transistor comprising a plurality of epitaxial layers on a common substrate, method comprising: (a) forming a plurality of source contacts on a first surface of the plurality of epitaxial layers; (b) forming at least one drain contact on the first surface; (c) forming at least one gate contact on the first surface; (d) forming at least one insulating layer over and between the gate contacts, source contacts and the drain contacts; (e) forming a conductive layer over at least a part of the at least one insulating layer for connecting the source contacts; and (f) forming at least one heat sink layer over the conductive layer.</p> |
申请公布号 |
WO2007046773(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
WO2006SG00255 |
申请日期 |
2006.09.01 |
申请人 |
TINGGI TECHNOLOGIES PRIVATE LIMITED;YUAN, SHU;KANG, XUE JUN;LIN, SHI MING |
发明人 |
YUAN, SHU;KANG, XUE JUN;LIN, SHI MING |
分类号 |
H01L27/082;H01L21/02;H01L29/737 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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