发明名称 |
Method and arrangement for predicting thermally-induced deformation of substrate, and a semiconductor device |
摘要 |
The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
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申请公布号 |
US2007090853(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20060546551 |
申请日期 |
2006.10.12 |
申请人 |
ASML NETHERLANDS B. V. |
发明人 |
MENCHTCHIKOV BORIS;DE JONG FREDERIK E. |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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