Transistor and semiconductor components and production process for thin film silicon on insulator transistor has embedded deformed layer

摘要

A transistor component comprises a substrate on which are, sequentially, a crystalline semiconductor layer (202), a trenched isolation layer, a second crystalline semiconductor layer, a gate electrode (205) and drain and source regions (218) with a deformed semiconductor material (220) within the drain and source regions extending to the first semiconductor layer. Independent claims are also included for the following: (A) A semiconductor component as above;and (B) A production process for a transistor as above.