METHOD FOR WRITING INTO NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

An NMOS transistor (14) has one end connected to one end of a resistance memory element (10). When a voltage is applied through the NMOS transistor (14) to the resistance memory element (10) to switch from the low resistance state to the high resistance state, the gate voltage of the NMOS transistor (14) is set to a value greater than or equal to the sum of the reset voltage of the resistance memory element (10) and the threshold voltage of the NMOS transistor (14) and smaller than the sum of the set voltage of the resistance memory element (10) and the threshold voltage of the NMOS transistor (14), so that the voltage applied to the resistance memory element (10) is set to a value greater than or equal to the reset voltage and smaller than the set voltage.