MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device with high quality by preventing an oxidized film thickness from largely fluctuating due to different hydrogen concentration depending on an arrangement place of a substrate, when isotropic oxidation is executed by a device in which a plurality of substrates are laminated and disposed. SOLUTION: A manufacturing method of a semiconductor device includes the steps of: carrying-in a plurality of substrates 1 into a processing chamber 4; processing the plurality of substrates 1 by supplying oxygen containing gas and hydrogen containing gas into the processing chamber 4 in a state that a pressure in the processing chamber 4 is set lower than an atmospheric pressure; and carrying-out the already processed plurality of substrates 1 from the processing chamber 4. In the step of processing the substrates 1, the oxygen containing gas is supplied from the upper stream side of the plurality of substrates 1, and the hydrogen containing gas is supplied from a plurality of places in the vicinity of an inner wall of the processing chamber 4 corresponding to a region where the plurality of substrates 1 exist. COPYRIGHT: (C)2007,JPO&INPIT