发明名称 PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a processing apparatus ensuring good film deposition uniformity among substrates and efficient purge of gas existing among substrates when film deposition processing is performed at once on the surfaces of a large number of substrates to be processed. SOLUTION: The processing apparatus comprises a holder 3 for holding substrates w to be processed in multistage, a treatment vessel 4 performing predetermined heat treatment on the substrates w to be processed under predetermined processing gas, temperature and pressure while containing the holder 3, a section 5 for introducing processing gas into the treatment vessel 4, an exhaust section 6 for evacuating the inside of the treatment vessel 4 to a predetermined pressure, and a section 7 for heating the treatment vessel 4. A processing space 10 partitioned by a partition board 8 is formed for every substrate w to be processed in the holder 3. The gas introducing section 5 has a hole 11 for introducing gas to each processing space 10 from one side and the exhaust section 6 has an exhaust hole 12 for every processing space 10 on the side opposing the gas introduction hole 11. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007109711(A) 申请公布日期 2007.04.26
申请号 JP20050296389 申请日期 2005.10.11
申请人 TOKYO ELECTRON LTD 发明人 MATSUURA HIROYUKI;NAKAO MASARU
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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