| 摘要 |
A semiconductor device having an NMOS and a PMOS device formed thereon is provided. The NMOS device has additional spacers formed alongside the gate electrode to allow the silicide region to be formed farther away from the gate electrode. By placing the silicide region farther away from the gate electrode, the effects of the lateral encroachment of the silicide region under the spacers is reduced, particularly the leakage. A method of forming the semiconductor device may include forming a plurality of spacers alongside the gate electrodes of a PMOS and an NMOS device, and one or more implants may be performed to implant impurities into the source/drain regions of the PMOS and NMOS devices. One or more of the spacers alongside the gate electrode of the PMOS device may be selectively removed. Thereafter, the source/drain regions may be silicided.
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