发明名称 |
Multiple device types including an inverted-T channel transistor and method therefor |
摘要 |
A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.
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申请公布号 |
US2007093054(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20050257972 |
申请日期 |
2005.10.25 |
申请人 |
MIN BYOUNG W;BURNETT JAMES D;MATHEW LEO |
发明人 |
MIN BYOUNG W.;BURNETT JAMES D.;MATHEW LEO |
分类号 |
H01L21/4763;H01L29/76;H01L29/94;H01L31/00 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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