| 摘要 |
A method for cleaning, especially by removing etch residue (e.g., polymers or particles) from a semiconductor structure, and a cleaning chemistry is described. The method of cleaning includes placing the semiconductor structure with an etch residue particle on it in a chemistry to remove the particle, wherein the active component of the chemistry consists of a carboxylic acid having equal numbers of COOH and OH groups. In one embodiment, the carboxylic acid is tartaric acid. In one embodiment, the chemistry further comprises water. |
