| 发明名称 |
SELF-ALIGNED GATE ISOLATION |
| 摘要 |
<p>Embodiments of the invention include a circuit with a transistor having a self-aligned gate. Insulating isolation structures may be formed, self-aligned to diffusions. The gate may then be formed self-aligned to the insulating isolation structures.</p> |
| 申请公布号 |
WO2007046920(A1) |
申请公布日期 |
2007.04.26 |
| 申请号 |
WO2006US29610 |
申请日期 |
2006.07.27 |
| 申请人 |
INTEL CORPORATION;CHANG, PETER |
发明人 |
CHANG, PETER |
| 分类号 |
H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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