发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a lower wire, an interlayer insulating film formed on the lower wire and having a via hole exposing the upper surface of the lower wire, a diffusion barrier formed on the inner wall of the via hole, and an upper wire filling the via hole and directly contacting the lower wire, in which a dopant region containing a component of the diffusion barrier is formed in the lower wire in the extension direction of the via hole. |
申请公布号 |
KR100714476(B1) |
申请公布日期 |
2007.04.26 |
申请号 |
KR20050113818 |
申请日期 |
2005.11.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, JUN HWAN;MAENG, DONG CHO;KIM, SOON HO |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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