| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a heat spreader capable of assuring high reliability in junction. <P>SOLUTION: A heat spreader 1 is formed of a molybdenum plate 2. Copper plating films 3 and 4 are formed on both surfaces of the molybdenum plate 2. The copper plating film 3 of the upper surface is ultrasonic-bonded to a copper plate 5 as wiring. The copper plating film 4 on the lower surface is bonded to an emitter electrode 8 of an IGBT chip 6 using a solder 7. Therefor, rigidity and high reliability in junction are assured. <P>COPYRIGHT: (C)2007,JPO&INPIT |
