| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce white flaw on a displayed image by suppressing a failure of a photosensitive area of a solid-state imaging device. <P>SOLUTION: In the solid-stage imaging device, an n-type impurity diffusing region is formed within the p-type region on a semiconductor substrate, and a photodiode area (photosensitive area) is formed with pn junction between the p-type region and n-type impurity diffusing region, arsenic (As) having the radius of atom similar to that of silicon (Si) is used in the shallow area near the front surface of substrate, and phosphorus (P) equivalent in mass to silicon (Si) is used in the deep area at the time of ion implantation of the n-type impurity diffusing region 3A forming the photodiode area 4 as the photosensitive area. <P>COPYRIGHT: (C)2007,JPO&INPIT |
