发明名称 PHASE CHANGE MEMORY APPARATUS, AND METHOD OF CONTROLLING READ OPERATION THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a phase change memory apparatus, and a method of controlling read operation thereof. SOLUTION: The phase change memory apparatus is provided with a memory array provided with a plurality of phase change memory cells, word lines connected to respective phase change memory cells, a voltage of the word line connected to a selected phase change memory cells, at the time of read operation, is transitioned between at least two voltage stages having different voltage levels. Thereby, in the phase change memory apparatus and the control method of its read operation, the voltage level of the word line is controlled by at least two voltage stages at the time of read operation. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007109381(A) 申请公布日期 2007.04.26
申请号 JP20060281964 申请日期 2006.10.16
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 OH HYUNG-ROK;PARK MU HUI;KIM DU-EUNG
分类号 G11C13/00 主分类号 G11C13/00
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