| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an integrated circuit including metal thin film resistive elements, in which semiconductor device obtains resistance values as designed without increasing the layout area of the metal thin film resistive elements. SOLUTION: The semiconductor device comprises a lower layer side insulating film 5, a wiring pattern 7 formed on the lower layer side insulating film 5, a substrate insulating film 9 formed on the lower layer side insulating film 5 and the wiring pattern 7, and a plurality of metal thin film resistive elements 13 formed on the substrate insulating film 9. A connection hole 11 is formed on the substrate insulating film 9 formed on the wiring pattern 7, and the wiring pattern 7 is connected electrically to the metal thin film resistive elements 13 via the connection hole 11. Each metal thin film resistive elements 13 has a belt-like portion 13a arranged to be separated from the connection hole 11, and a connection 13b which is formed to be continuous with the belt-like portion 13a and is connected to the wiring pattern 7 via the connection hole 11. The connections 13b of two metal thin film resistive elements 13 are so formed on one connection hole 11 across a gap to be separated from each other. COPYRIGHT: (C)2007,JPO&INPIT |
