发明名称 Duty cycle correction circuit, clock generation circuits, semiconductor devices using the same, and method for generating clock signal
摘要 A semiconductor device and method of generating clock signals where a phase lock loop (PLL), or a delay lock loop (DLL), comprises a duty cycle correction circuit (DCC) having a shared charge pump and a plurality of amplification parts. The plurality of amplification parts generate internal clock signals. The shared charge pump adjusts voltage level of control signal (VC) in response to the internal clock signals and provides the control signal VC to each of the amplification parts.
申请公布号 US2007090866(A1) 申请公布日期 2007.04.26
申请号 US20060496447 申请日期 2006.08.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK MOON-SOOK;KIM KYU-HYOUN
分类号 H03K3/017 主分类号 H03K3/017
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