| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device where correspondence to multiple pins becomes possible without reducing a distance between electrode pads of a semiconductor element, and enlarging a size of the semiconductor element and IR drop phenomenon where output voltage drops of a power supply can be prevented in a circuit core. <P>SOLUTION: Outer peripheral electrode pads 5 are formed on a plurality of input/output cells at an outer periphery of a circuit forming region 4 in the semiconductor element 3. Outer peripheral bumps 10 are formed in the outer peripheral electrode pads 5. Inner electrode pads 14 are formed on the input/output cells disposed within the range of the circuit forming region 4. The inner electrode pads 14 are electrically connected to the power supply 18 disposed in the circuit of the semiconductor element 3. Two inner bumps 16 are formed in the inner electrode pad 14. An epoxy resin material is laid between the semiconductor element 3 and the semiconductor substrate by flip chip mounting. The respective outer peripheral and inner bumps 10 and 16 and respective wiring electrodes of the semiconductor substrate are connected. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
