| 摘要 |
A semiconductor device employs two electric fuses ( 31, 32 ) connected in parallel to each other. First terminals of the electric fuses ( 31, 32 ) are connected to a junction of first and second P-channel transistors ( 21, 22 ), which are connected in series between a high potential application line ( 111 ) and a ground, and connected to a third P-channel transistor ( 23 ). Second terminals of the electric fuses ( 31, 32 ) are connected to a low potential application line ( 121 ). When an extra-high voltage is applied between the first and second terminals of the electric fuses ( 31, 32 ), a breakdown connection is produced in at least one of the electric fuses ( 31, 32 ). Thus, 1-bit information is written into the semiconductor device.
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