发明名称 |
Integrated semiconductor structure for SRAM cells |
摘要 |
A semiconductor structure includes a semiconductor substrate having a first device area and a second device area. A gate layer is formed across the first device area and the second device area on the semiconductor substrate, wherein a first portion of the gate layer running across the first device area is doped with impurities of a type different from that of a second portion of the gate layer running across the second device area. A cap layer is formed on the gate layer for protecting the same covered thereunder from forming a silicide structure, having at least one opening at a junction of the first and second portions of the gate layer. A silicide layer is formed on the gate layer that is exposed by the opening for reducing resistance at the junction between the first and second portions.
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申请公布号 |
US2007090428(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20050257572 |
申请日期 |
2005.10.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIAW JHON-JHY |
分类号 |
H01L29/94;H01L21/4763;H01L27/108;H01L29/76;H01L31/00;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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