发明名称 CAPACITIVELY COUPLED PLASMA REACTOR HAVING A COOLED/HEATED WAFER SUPPORT WITH UNIFORM TEMPERATURE DISTRIBUTION
摘要 <p>A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.</p>
申请公布号 KR20070043678(A) 申请公布日期 2007.04.25
申请号 KR20060102416 申请日期 2006.10.20
申请人 APPLIED MATERIALS INC. 发明人 HOFFMAN DANIEL J.;BRILLHART PAUL LUKAS;FOVELL RICHARD;TAVASSOLI HAMID;BUCHBERGER DOUGLAS A. JR.;BURNS DOUGLAS H.;BERA KALLOL
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址