NONVOLATILE MEMORY DEVICE COMPRISING NANODOT AND MANUFACTURING METHOD FOR THE SAME
摘要
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.
申请公布号
KR20070043444(A)
申请公布日期
2007.04.25
申请号
KR20050099737
申请日期
2005.10.21
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, SANG JIN;LEE, MYOUNG JAE;CHA, YOUNG KWAN;SEO, SUN AE;CHO, KYOUNG SANG;SEOL, KWANG SOO