发明名称 Patterns for inkjet TFT circuit development
摘要 A specially designed mask controls the arrangement of conductive materials that form a source and drain of a transistor. Designing the mask can be costly and time-consuming, which means that the testing of a circuit involving a transistor can also be costly, time consuming and a barrier towards efficient circuit development and testing. Accordingly, the present invention provides a pre-fabricated, general-purpose pattern comprising an array of conductive islands. The pattern is used as a source and a drain terminal for the formation of a thin-film transistor and as a conductive source for the formation of other electrical components upon the array.
申请公布号 GB0705132(D0) 申请公布日期 2007.04.25
申请号 GB20070005132 申请日期 2007.03.16
申请人 SEIKO EPSON CORPORATION 发明人
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